A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers

Shuyu Bao; Yue Wang; Khaw Lina; Li Zhang; Bing Wang; Wardhana Aji Sasangka; Kenneth Eng Kian Lee; Soo Jin Chua; Jurgen Michel; Eugene Fitzgerald; Chuan Seng Tan; Kwang Hong Lee

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A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers

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The heterogeneous integration of III-V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications,such as HEMT or LED with integrated control circuitry.For heterogeneous integration,direct wafer bonding(DWB)techniques can overcome the materials and thermal mismatch issues by directly bonding dissimilar materials systems and device structures together.In addition,DWB can perform at wafer-level,which eases the requirements for integration alignment and increases the scalability for volume production.In this paper,a brief review of the different bonding technologies is discussed.After that,three main DWB techniques of single-,double-and multi-bonding are presented with the demonstrations of various heterogeneous integration applications.Meanwhile,the integration challenges,such as micro-defects,surface roughness and bonding yield are discussed in detail.

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《半导体学报》 |2021年第2期|80-99|共20页
作者
Shuyu Bao; Yue Wang; Khaw Lina; Li Zhang; Bing Wang; Wardhana Aji Sasangka; Kenneth Eng Kian Lee; Soo Jin Chua; Jurgen Michel; Eugene Fitzgerald; Chuan Seng Tan; Kwang Hong Lee;
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作者单位

Low Energy Electronic Systems(LEES);

Singapore-MIT Alliance for Research and Technology(SMART);

Singapore 138602;

Singapore;

School of Electronics and Information Technology;

Sun Yat-Sen University;

Guangzhou 510006;

China;

Department of Electrical and Computer Engineering;

National University of Singapore;

Singapore 117576;

Singapore;

Materials Research Laboratories;

Massachusetts Institute of Technology;

Cambridge;

MA;

02139;

USA;

Department of Materials Science and Engineering;

Massachusetts Institute of Technology;

Cambridge;

MA 02139;

USA;

School of Electrical and Electronic Engineering;

Nanyang Technological University;

Singapore 639798;

Singapore;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
material; thin film; integrated circuit;

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1. Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate [J] . SUN ,Yuanping(孙元平) ,FU . 中国科学 . 2002,第003期
2. Patterned wafer bonding using ultraviolet adhesive [J] . Rui ZHUO ,Guanglan LIAO ,Wenliang LIU . 中国高等学校学术文摘·机械工程 . 2011,第002期

A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers

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