2D arsenenes

         

摘要

Graphene has raised a huge wave in 2D materials field,breeding lots of graphene analogs with applications in optical and electrical devices,energy conversion and storage,bio-logy,etc.[1,2].Graphene presents superior carrier mobility,while its zero-bandgap restricts its transistor application.To make up this shortcoming,new 2D materials with certain bandgaps and high carrier mobility are being developed.Two typical materials are transition metal dichalcogenides(TMDs)and black phosphorus,which exhibit layered structure,layer-dependent band structure and strong quantum con-straints[3−5].As a congener of phosphorus,arsenic can complement the bandgap of existed 2D materials[6−18].

著录项

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号