SiO2薄膜是薄膜压力传感器绝缘层的一种常用材料,其性能直接影响着传感器的抗电能力.利用化学气相沉积系统(CVD)对SiO2薄膜的制备工艺进行了探索和优化,通过改变射频功率、反应气体流量比,制备出适用于高抗电薄膜压力传感器的SiO2绝缘层,其抗电能力可达300V/AC.%The SiO2 film is widely used as dielectric in the thin film pressure sensor field, whose performance affects the sensor's dielectric property directly. In this paper the preparation of SiO2 film by chemical-vapor-deposition is investigated. The sensor's dielectric property can reach 300V/AC with the SiO2 film optimized by adjusting the RF power and the ratio of reaction gases.
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