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《武汉理工大学学报：材料科学英文版》
>Effect of Mg-Film Thickness on the Formation of Semiconductor Mg_2Si Films Prepared by Resistive Thermal Evaporation Method
Effect of Mg-Film Thickness on the Formation of Semiconductor Mg_2Si Films Prepared by Resistive Thermal Evaporation Method
Mg fi lms of various thicknesses were deposited on Si(111) substrates at room temperature by resistive thermal evaporation method, and then the Mg/Si samples were annealed at 40 ℃ for 4 h. The effects of Mg fi lm thickness on the formation and structure of Mg2Si fi lms were investigated. The results showed that the crystallization quality of Mg2Si fi lms was strongly infl uenced by the thickness of Mg fi lm. The XRD peak intensity of Mg2Si(220) gradually increased initially and then decreased with increasing Mg fi lm thickness. The XRD peak intensity of Mg2Si(220) reached its maximum when the Mg fi lm of 380 nm was used. The thickness of the Mg2Si fi lm annealed at 400 ℃ for 4 h was approximately 3 times of the Mg fi lm.
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