As a stable refractory compound, Hafnium dioxide （HfO2） has potential application in electronic, optical and energy- related fields. In this work, HfOz films were deposited at various O2/Ar ratios by reactive sputtering. XRD showed that the O2/Ar ratios could not obviously change the structure of the samples. Using Debye - Scherrer formula, the grain sizes of the samples were estimated at the nano - scale. The stoichiometric film was obtained at the 0.06 O2/Ar ratio （ namely 2.5sccm O2 flow rate） and the 12 W sputtering power in our experiments. The fihns were transparent in the range of visible light （T% 〉 85% ） and had obvious absorption at wavelength less than 220 nm. The band gap of samples estimated by Tauc plot ranged from 5.051 eV to 5. 547 eV.%作为一种性能稳定的绝缘体，HfO2在电子、光学以及能量相关的领域中有着重要的应用。在本工作中，我们使用反应溅射方法在不同O2／Ar比例下制备了HfO2薄膜。XRD结果显示，O2／At比例并不能明显的影响样品的结构。通过Debye—Schener公式估计，样品由纳米晶粒组成。在O2／Ar比例为0．06（功率12W）时制备的样品最接近化学配比。在可见光区域，样品具有很好的透光率，T〉85％。明显的吸收发生在波长小于220nm时。通过Tauc公式可以估算出，样品的带隙在5．051到5．547eV范围内变化。
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