对碲镉汞材料干法刻蚀损伤进行研究,采用感应耦合等离子体干法刻蚀技术、湿法腐蚀方法完成碲镉汞接触孔刻蚀,通过扫描电子显微镜和激光扫描显微镜分析刻蚀后样品的表面形貌,利用伏安特性曲线分析刻蚀样品的表面损伤.实验结果表明,干法刻蚀工艺极易造成碲镉汞p型接触孔表面反型,提出了一种新型的干法混合刻蚀技术,该技术通过两步干法刻蚀工艺实现,有效地降低了刻蚀引入的表面损伤.%The damages in HgCdTe dry etching were studied.The contact hole of HgCdTe samples were fabricated by inductively coupled plasma(ICP)dry etching and wet etching.The morphology of the etched surface were analyzed by scanning electron microscope(SEM)and laser scanning microscope(LSM),and the damages were analyzed by the current-voltage characteristic curve.The experiment results show that the p-type hole of HgCdTe sample can easily be converted to n-type hole by using dry etching,so a kind of new dry mixed etching technique is proposed.It uses two step dry etching and can effectively reduce the introduced damage.
展开▼
