为了合理地设计光学系统以整形大功率激光二极管阵列（High Diode Laser Stack）出射光束，必须准确了解HDLS的远场分布，然而对于HDLS远场分布的研究还不多。从亥姆霍兹方程出发，以激光二极管（Diode Laser）远场分布特性为基础，提出了一种新的半导体激光器阵列的远场分布模型，通过计算机仿真给出了简化DLS 模型的远场光场变化图；模型还可表示不对称的双峰结构，有一定的现实意义。%In order to design optical system to collimate laser beam,its far-field distribution should be acquired exact-ly.Based on Helmholtz equation and far-field distribution characteristic of DL(diode laser),a new far-field expression model of DLS(diode laser stack)is proposed.The changing graph of far-field intensity distribution of the simplified DLS is given by simulation. The model has some practical significance because it can express asymmetrical double-peak structure.
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