Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

著录项

• 来源
  《光：科学与应用（英文版）》 |2022年第5期|808-819|共12页
• 作者

  Hongliang Chang; Zhetong Liu; Shenyuan Yang; Yaqi Gao; Jingyuan Shan; Bingyao Liu; Jingyu Sun; Zhaolong Chen; Jianchang Yan; Zhiqiang Liu; Junxi Wang; Peng Gao; Jinmin Li; Zhongfan Liu; Tongbo Wei;

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• 作者单位

  Research and Development Center for Semiconductor Lighting Technology;

  Institute of Semiconductors;

  Chinese Academy of Sciences;

  100083 Beijing;

  China;

  Center of Materials Science and Optoelectronics Engineering;

  University of Chinese Academy of Sciences;

  100049 Beijing;

  China;

  Center for Nanochemistry(CNC);

  Beijing Science and Engineering Center for Nanocarbons;

  Beijing National Laboratory for Molecular Sciences;

  College of Chemistry and Molecular Engineering;

  Peking University;

  100871 Beijing;

  China;

  Electron Microscopy Laboratory;

  and International Center for Quantum Materials;

  School of Physics;

  Peking University;

  100871 Beijing;

  China;

  Beijing graphene institute(BGI);

  100095 Beijing;

  China;

  Academy for Advanced Interdisciplinary Studies;

  Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials;

  Peking University;

  100871 Beijing;

  China;

  State Key Laboratory of Superlattices and Microstructures;

  Institute of Semiconductors;

  Chinese Academy of Sciences;

  100083 Beijing;

  China;

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• 原文格式 PDF
• 正文语种 chi
• 中图分类 半导体技术;
• 关键词

  sapphire; diode; strain;