随着集成电路线宽变窄,要求铜互连表面具有更低的表面粗糙度,对化学机械抛光(CMP)技术提出更高的要求.采用聚苯乙烯(PS) -二氧化硅(SiO2)复合颗粒作为铜层CMP的抛光磨粒,研究出PS-SiO2核壳结构的形成条件,分析新型抛光液体系中各颗粒含量、pH值等因素对Cu抛光效果的影响,通过X射线光电子能谱(XPS)、扫描电镜( SEM)等手段探讨其中的抛光机制和颗粒残留等问题.结果表明:较之PS、SiO2颗粒抛光液,复合颗粒抛光液抛光Cu后,获得更大的去除和更好的表面质量,且与抛光过程中摩擦因数的关系相符合.%With the hnewidth of Integrated Curcuits( IC) narrower and narrower,the surface of Cu interconnection would be made lower roughness and Chemical Mechanical Polishing( CMP) technology would be more brilliant. Polystyrene (PS)-Silica (SiO2) composite particles as the abrasive in CMP of copper, the preparation condition of the particles was discussed. The influences of two particles concentration in composite particles and pH value in new slurry were analyzed. X-ray photo-electron Spectrometer(XPS)and Scanning Electron Microscope (SEM) were used to study polishing mechanism and particles residual. The results show that the slurry with PS-SiO2 composite particles comparing with PS and SiO2 particles,acquires higher material removal rate and better surface quality in CMP of copper, which is in accordance with the relation of friction coefficient in polishing process.
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