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Analysis of Current Research Status of Plasma Etch Process Model

         

摘要

This paper summarizes the status of the plasma etch process modeling research.It mainly introduces typical etching models employing the analytical method,geometric method,system identification method,basic principle simulation method,as well as empirical model.Each model’s basic principles,application scopes,advantages and disadvantages are discussed.Based on these,the development history of the etch process modeling is summarized,and the development opportunities of the etch model are prospected.This paper provides a brief view for establishment of the plasma etching process model.

著录项

  • 来源
    《微电子制造学报》 |2018年第1期|P.21-34|共14页
  • 作者单位

    [1]North China University of Technology;

    Beijing 100144;

    China;

    [2]Key Laboratory of Microelectronic Devices&Integrated Technology;

    Institute of Microelectronics of Chinese Academy of Sciences;

    Beijing 100029;

    China;

    [1]North China University of Technology;

    Beijing 100144;

    China;

    [1]North China University of Technology;

    Beijing 100144;

    China;

    [1]North China University of Technology;

    Beijing 100144;

    China;

    [1]North China University of Technology;

    Beijing 100144;

    China;

    [1]North China University of Technology;

    Beijing 100144;

    China;

    [1]North China University of Technology;

    Beijing 100144;

    China;

    [2]Key Laboratory of Microelectronic Devices&Integrated Technology;

    Institute of Microelectronics of Chinese Academy of Sciences;

    Beijing 100029;

    China;

  • 原文格式 PDF
  • 正文语种 CHI
  • 中图分类 无线电电子学、电信技术;
  • 关键词

    plasma etching; etching model; simulation;

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