采用热蒸发法在50℃、100℃、150℃这3种不同的基底温度下沉积CdS薄膜,且对150℃生长的CdS薄膜取样进行退火处理30 min,并对所有样品的微观结构和光学特性进行了分析.结果表明,不同基底温度下制备的CdS薄膜均具有(002)择优取向生长的特征,且随着基底温度的升高,(002)特征衍射峰强度增加,半高宽变小,相应薄膜结晶度增大,有利于晶粒的生长.最终发现,150℃生长且经过退火处理的薄膜具有较为明显的六方相CdS多晶薄膜结构和较优的光学性能,能满足高效CIGS薄膜电池中缓冲层材料的基本要求.%CdS films were deposited onto glass substrates at the substrate temperture of 50 ℃ , 100 ℃ , 150 ℃ by thermal evaporation, the effect of the temperature was presented. The CdS film deposited at substrate temperture of 150 ℃ was annealed at 150 ℃ for 30 min. The deposited films were characterized for their morphology, structure and optical property. For all the CdS films deposited at different substrate temperature, the preferential orientation is along (002) plane. And as the temperature become higher, the intensity of peak of the (002) plane increased rapidly, and the full-width-at-half-maximum (FWHM) values of the peak became somewhat narrower at higher substrate temperature. CdS annealed has the better crystalline property and optical property. This new method leads to the improved performance of CIGS solar cells and also simplify the whole fabrication technology.
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