采用射频磁控反应溅射法在不同工艺下制备微米级厚度的氮化硅薄膜,并利用椭圆偏振仪、分光光度计、X射线衍射仪、电子探针显微分析仪以及红外光谱仪对薄膜的光学性能、微观结构及化学成分进行了表征.测试结果表明,当N2和Ar的流量为1∶1时所制备样品为非晶态结构的高折射率富氮氮化硅薄膜；低温热处理对薄膜折射率有一定的改善作用；透过率随溅射气压的增加而升高、随功率的增大而降低；N-Si键的强度随溅射气压的升高而降低.%Radio frequency magnetron sputtering method was employed to prepare the micron grade silicon nitride thin film with different sputtering process. Spectroscopic ellipsometry, spectrophotometer, X-ray diffractome-ter, electron probe microscopic analyzer and infrared spectrometer were used to characterize the film optical properties, microstructure and chemical composition. When the flow ratio of N2 to Ar is controlled at 1 ∶ 1, the samples are amorphous, high refractive index and N-rich silicon nitrogen films. The refractive index of the film can be improved by low temperature annealing process. The film transmittance rises with the increase of sputtering pressure, and decreases with the increase of sputtering power. The intensity of N-Si bond can be reduced with higher sputtering pressure.
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