Na/Mg co-deped ZnO thin films were prepared by sol-gel spin-coating method. By comparative analysis of undoped, only Mg-doped and Na/Mg co-doped ZnO films, the structural, optical and electrical properties of the Na/Mg co-doped films were discussed in detail. The results investigated by the scanning electron microscopy (SEM) , X-ray diffraction (XRD), transmission and photoluminescence (PL) spectra show that Na/Mg co-doped ZnO films have good crystal and r-axis preferred orientation properties. The forbidden energy band width of the ZnO films will be increased by Na/Mg co-doped, but the increased extent is smaller than that increased by only Mg doped. After the oxygen vacant defects were removed, Na/Mg co-doped films will be a good kind of ultraviolet emitting material. The analysis result of the Hall effect shows that Na/Mg co-doped can change the electric conduction properties of the ZnO films from N-type to P-type, and the resistivity of the films can also be largely improved.%利用溶胶-凝胶旋涂法制备了Na/Mg共掺ZnO薄膜.通过与未掺杂及只掺Mg的ZnO薄膜的对比分析,重点研究了Na/Mg共掺ZnO薄膜的结构、光学及电学特性.扫描电子显微镜(SEM)图像、X射线衍射(XRD)图谱、透射光谱及PL谱的分析结果表明,Na/Mg共掺有利于提高ZnO薄膜的结晶特性及c轴择优取向性.Na/Mg共掺会使得ZnO薄膜的禁带宽度增加,但增加的幅度小于单独掺Mg引起的禁带宽度增加.消除氧空位缺陷后,Na/Mg共掺ZnO薄膜将是一种很好的紫外发光材料.霍尔效应分析结果表明,Na/Mg共掺杂可将ZnO薄膜导电性从N型转变为P型,且使电阻率有很大幅度的增加.
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