利用直流磁控溅射法在硅基底上沉积出纳米晶钛薄膜,研究了背底真空度、溅射功率和基底温度对纳米晶钛薄膜结构的影响.实验证明,当背底真空度高于8.8×10-5 Pa时,可制备出致密的纳米晶钛薄膜,当背底真空度低于2.0×10-4 Pa时,钛薄膜被氧化成一氧化钛薄膜；随着溅射功率的增大,纳米晶钛膜的晶粒尺寸呈线性增大,同时钛薄膜的取向也发生改变,表现出明显的(002)织构；随着温度的升高,钛薄膜织构取向发生改变,当温度为500℃时,钛薄膜被氧化为一氧化钛薄膜.制成平整钛薄膜的工艺条件为:背底真空度8.8×10-5 Pa,溅射功率200W,基底温度室温.%The nanocrystal titanium thin films were deposited on silicon substrate by magnetron sputtering. The effects of background vacuum, sputtering power and substrate temperature on thin films were studied. Experimental results show that dense nanocrystalline titanium films can be prepared when the background vacuum is higher than 8. 8×10-5 Pa,but the titanium films are oxidized into titanium monoxide when the background vacuum is lower than 2. 0×10-4 Pa. As the power increases, the grain size of nanocrystalline titanium film increases linearly,while the orientation of the titanium film is transited to (002) texture. The texture orientation of titanium film also changes with increasing temperature. When the temperature is higher than 500 ℃ , the titanium film is changed to titanium dioxide. Optimized conditions of sputtering should be selected asthe background vacuum of 8. 8×10-5Pa, sputtering power of 200 W and room temperature of the substrate temperature.
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