With the advance of semiconductor technology nodes, the traditional semiconductor memory technology has failed to meet the increasing requirements of portable information products. Resistance random accessory memory (RRAM) is a new storage way, the device has many advantages, including a simple structure, compatibility with CMOS process, high-density integration and fast memory, which aroused the widespread interest of investigators and become a hot research field. This review briefly comments the current status of RRAM devices investigations, from the basic working principles, microscopic physical mechanism, the challenges for practical application and the novel RRAM devices.%随着半导体技术节点的推进,传统的半导体存储技术已经满足不了人们对便携式信息产品的要求.阻变式存储器(RRAM)作为一种新的存储技术,其器件具有结构简单、与CMOS工艺兼容、可高密度集成以及快速存储等优势,引起人们广泛的研究兴趣并成为国内外研究的热点领域.就目前RRAM器件的研究现状,从RRAM器件的基本工作原理、微观物理机制、实际应用所遭遇的挑战以及新型RRAM器件等方面进行了简要评述.
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