采用直流磁控溅射法在铜基底上制备了TiAlN/SiO2选择性吸收薄膜.通过调整制备过程中的工艺参数,得到优化后的组合薄膜(铜基底),其吸收率可达0.92、发射率为0.06.在此组合膜系中,TiAlN为吸收层,SiO2为减反层.对基底为铜片的样品在550℃退火2h,其性质保持稳定,表明TiAlN/SiO2组合薄膜在高湿太阳能选择性吸收领域具有一定的应用前景.%TiAlN/SiO2 selective absorbing film was deposited on copper substrates using a DC magnetron reactive sputtering system. The absorptance of optimized tandem absorber is 0. 92 and the emittance is 0. 06. In this tandem absorber TiAlN is absorbing layer and SiO2 acts as an antireflection coating. The copper-matrix tandem absorber were annealed (in air) at different temperatures for 2h, and exhibited good thermal stability up to 550℃. The results indicate the application potential of TiAlN/SiO2 selective absorber in high temperature solar selective absorbing.
展开▼
