首页> 中文期刊> 《材料导报》 >钛合金表面阴极微弧电沉积Al2O3-SiC复合涂层

钛合金表面阴极微弧电沉积Al2O3-SiC复合涂层

         

摘要

通过高温烧结法在TC4钛合金表面制备了起弧阻挡层,然后采用阴极微弧电沉积工艺在TC4钛合金表面制备了Al2O3-SiC复合陶瓷涂层,重点研究了复合陶瓷涂层的制备工艺及影响因素,并采用扫描电镜、能谱仪等观测了起弧阻挡层及复合陶瓷涂层的表面微观形貌及成分组成.结果表明,阴极微弧电沉积技术能够在钛合金表面制备出Al2O3-SiC复合涂层,且起弧阻挡层至关重要,为起弧必备条件,SiC在Al2O3基体中的分散性较好,涂层较厚且分布均匀.%Barrier layer was prepared by repeated sintering in aluminate solution, then use cathodic micro-arc electrodeposition technology to prepare AI2O3-SiC coating on TC4 samples. The preparation method and influence factors of AI2O3-SiC coating was studied, the microscopic structure of Al2O3-SiC coating was observed using scanning electron microscope and energy spectrometer. The results show that Al2O3-SiC coating have a good quality that prepared by cathodic micro-arc electrodeposition technology, and the barrier coating is the prerequisites before deposit, SiC powder have a good dispersibility in AI2O3 matrix, and the coating is thick.

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