首页> 中文期刊> 《材料导报》 >KH-550硅烷偶联剂对半导体制造用碳化硅粉体表面的改性研究

KH-550硅烷偶联剂对半导体制造用碳化硅粉体表面的改性研究

         

摘要

采用KH-550硅烷偶联剂对SiC粉体进行改性,研究了影响SiC粉体改性的各种因素,从而确定出改性最佳工艺参数,并对制备的改性粉体进行表征,分析了改性对SiC料浆分散稳定性的影响.结果表明,SiC微粉经偶联剂处理后没有改变原始SiC微粉的物相结构,只是改变了其在水中的胶体性质;微粉团聚现象减少,分散性得到改善;改性SiC微粉与原始SiC微粉相比,表面特性发生很大变化,Zeta电位值显著提高,悬浮液的分散稳定性得到明显改善.%The surface modification of SiC powder with KH-550 aminoorganosilanes was carried out and various influencing factors of the surface modification were researched, and the optimum process parameters of modification was pointed out, the effect of surface modification on the dispersion stabilization of SiC slurry was analyzed. The results showed that the SiC powder treated by aminoorganosilanes did not change the phase structure of original SiC, it just changed the colloidal properties in water, reunion reduced and dispersion property improved of SiC powder. Compared with the original SiC powder, the surface characteristics of modified SiC powder changed remarkably and zeta potential improved. The dispersion stabilization of SiC slurry increased remarkably.

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