In the present work, sapphire single crystals were implanted with 110 keV He ions at 320 and 600 K temperature to doses ranging from (0.5 to 2)×1017 ions/cm2, and some of them were subsequently irradiated at 300 K with 208pb27+. These samples were investigated by using PL (λex=340 nm) and FTIR spectroscopy, and the PL characters of the samples were studied. For He ion implanted sapphire, the obtained PL
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