首页> 中文期刊> 《纳微快报:英文版》 >Enhanced Performance of a Monolayer MoS2/WSe2 Heterojunction as a Photoelectrochemical Cathode

Enhanced Performance of a Monolayer MoS2/WSe2 Heterojunction as a Photoelectrochemical Cathode

         

摘要

Transition-metal dichalcogenide(TMD) semiconductors have attracted interest as photoelectrochemical(PEC) electrodes due to their novel band-gap structures,optoelectronic properties, and photocatalytic activities.However, the photo-harvesting efficiency still requires improvement. In this study, A TMD stacked heterojunction structure was adopted to further enhance the performance of the PEC cathode. A P-type WSe2 and an N-type Mo S2 monolayer were stacked layer-by-layer to build a ultrathin vertical heterojunction using a micro-fabrication method.In situ measurement was employed to characterize the intrinsic PEC performance on a single-sheet heterostructure.Benefitting from its built-in electric field and type II band alignment, the MoS2/WSe2 bilayer heterojunction exhibited exceptional photocatalytic activity and a high incident photo-to-current conversion efficiency(IPCE). Comparing with the monolayer WSe2 cathode, the PEC current and the IPCE of the bilayer heterojunction increased by a factor of 5.6 and enhanced 50%, respectively. The intriguing performance renders the MoS2/WSe2 heterojunction attractive for application in high-performance PEC water splitting.

著录项

  • 来源
    《纳微快报:英文版》 |2018年第4期|P.52-60|共9页
  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies;

    Guangdong Province Key Laboratory of Display Material and Technology;

    School of Electronics and Information Technology;

    Sun Yat-sen University;

    State Key Laboratory of Optoelectronic Materials and Technologies;

    Guangdong Province Key Laboratory of Display Material and Technology;

    School of Electronics and Information Technology;

    Sun Yat-sen University;

    State Key Laboratory of Optoelectronic Materials and Technologies;

    Guangdong Province Key Laboratory of Display Material and Technology;

    School of Electronics and Information Technology;

    Sun Yat-sen University;

    State Key Laboratory of Optoelectronic Materials and Technologies;

    Guangdong Province Key Laboratory of Display Material and Technology;

    School of Electronics and Information Technology;

    Sun Yat-sen University;

    State Key Laboratory of Optoelectronic Materials and Technologies;

    Guangdong Province Key Laboratory of Display Material and Technology;

    School of Electronics and Information Technology;

    Sun Yat-sen University;

  • 原文格式 PDF
  • 正文语种 CHI
  • 中图分类 材料;
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