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Discharge voltage behavior of electric double-layer capacitors during high-g impact and their application to autonomously sensing high-g accelerometers

         

摘要

In this study,the discharge voltage behavior of electric double-layer capacitors (EDLCs) during high-g impact is studied both theoretically and experimentally.A micro-scale dynamic mechanism is proposed to describe the physical basis of the increase in the discharge voltage during a high-g impact.Based on this dynamic mechanism,a multi-field model is established,and the simulation and experimental studies of the discharge voltage increase phenomenon are conducted.From the simulation and experimental data,the relationship between the increased voltage and the high-g acceleration is revealed.An acceleration detection range of up to 10,000g is verified.The design of the device is optimized by studying the influences of the parameters,such as the electrode thickness and discharge current,on the outputs.This work opens up new avenues for the development of autonomous sensor systems based on energy storage devices and is significant for many practical applications such as in collision testing and automobile safety.

著录项

  • 来源
    《纳米研究(英文版)》 |2018年第2期|1146-1156|共11页
  • 作者单位

    Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Tsinghua University, Beijing 100084, China;

    State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China;

    Department of Precision Instrument, Tsinghua University, Beijing 100084, China;

    Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Tsinghua University, Beijing 100084, China;

    State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China;

    Department of Precision Instrument, Tsinghua University, Beijing 100084, China;

    College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China;

    Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Tsinghua University, Beijing 100084, China;

    State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China;

    Department of Precision Instrument, Tsinghua University, Beijing 100084, China;

    Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Tsinghua University, Beijing 100084, China;

    State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China;

    Department of Precision Instrument, Tsinghua University, Beijing 100084, China;

    School of Chemical Engineering, Stanford University, California 94305, USA;

    Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;

    Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Tsinghua University, Beijing 100084, China;

    State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, China;

    Department of Precision Instrument, Tsinghua University, Beijing 100084, China;

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