Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage

Lijun Liu; Chenyi Zhao; Li Ding; Lianmao Peng; Zhiyong Zhang

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Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage

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摘要

A small bandgap and light carrier effective mass(mo)lead to obv ous ambipolar transport behavior in carbon nanotube(CNT)fild-effect transistors(FE Ts),including a high off-state current and severe degradation of the subthreshold swing(SS)with increasing drain bias voltage.We demonstrate a drain-engineered method to cope with this common problem in CNT-film FETs with a sub-μum channel length,i.e.,suppressing the ambipolar behavion while maintaining high on-state performance by adopting a feedback gate(FBG)structure to extend the drain region from the CNT/metal contact to the proximate CNT channels to suppress the tunneling current.Sub-400-nm-channel-length FETs with a FBG structure statistially present a high on/off ratio of up to 10*and a sub-200 mV/dec SS under a high drain bias of up to-2 V whle maintaining a high on-state current of 0.2 mA/μm or a peak transconductance of 0.2 mS/um.By lowering the supply voltage to 1.5 V,FBG CNT-fim FETs can meet the requirement of standard-pertormance ultra large scale integrated circuits(ULSICs).Therefore,the introduction of the drain engineering structure enables applications of CNT-film-based FETs in ULSICs and could also be widely extended to other small-bandgap semiconductor-based FETs for an improvement in their off-state property.

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来源
《纳米研究：英文版》 |2020年第7期|P.1875-1881|共7页
作者
Lijun Liu; Chenyi Zhao; Li Ding; Lianmao Peng; Zhiyong Zhang;
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作者单位

Key Laboratory far the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 China;

Key Laboratory far the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 China;

Key Laboratory far the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 China;

Key Laboratory far the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 China;

Key Laboratory far the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 China;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
carbon nanotube; field-effect transistor; current leakage; subthreshold swing; small bandgap semiconductor;

机译：碳纳米管;场效应晶体管;漏电流;亚阈值摆幅;小带隙半导体;

Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage

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