Phase changes of the ZrO2-12wtY2O3 film with Ar+ irradiation

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Phase changes of the ZrO2-12wtY2O3 film with Ar+ irradiation

机译：Ar +辐照下ZrO2-12wt％Y2O3薄膜的相变

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The zirconia containing 12wt%Y2O3 thin films deposited by r.f.magnetron sputtering at 25℃ or 400℃, and then bombarded with Ar+ beam at room temperature were characterized with XRD before and after Ar+ bombardment.It is found that a series of phases formation and transformation happened, among them the mostimportant event is that T' phase appeared after Ar+ irradiation andthe content of the T' phase increased with the increase of Ar+ iondoses from 5×1015 to 6×1016 ions cm-2.

机译：分别在25℃或400℃下通过射频磁控溅射沉积含12wt％Y2O3的氧化锆，然后在室温下用Ar +束轰击，然后用XRD表征了Ar +轰击前后的相变。其中最重要的事件是在Ar +辐照后出现了T'相，并且随着Ar +离子剂量从5×1015到6×1016 cm-2的增加，T'相的含量也增加了。

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《核技术（英文版）》 |1999年第1期|31-34|共4页
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作者单位

Institute of Nuclear Science and Technology, Sichuan University,Chengdu 610064;

Institute of Nuclear Science and Technology, Sichuan University,Chengdu 610064;

Institute of Nuclear Science and Technology, Sichuan University,Chengdu 610064;

Institute of Nuclear Science and Technology, Sichuan University,Chengdu 610064;

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收录信息中国科学引文数据库(CSCD);
原文格式 PDF
正文语种 chi
中图分类物理学;
关键词
Magnetron sputtering, ZrO2-12wt; Y2O3 film, Ar+ irradiation, XRD;

机译：磁控溅射;ZrO2-12wt;Y2O3膜;Ar +辐照;XRD;

Phase changes of the ZrO2-12wtY2O3 film with Ar+ irradiation

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