In addition to describing the conduction- and growing-mechanism of ITO films, the paper also discusses the influence of the ratio of indium to tin, the oxygen partial pressure, the substrate temperature and the evaporation rate on electrical and optical properties of the ITO films prepared by ion aided deposition. Under the optimized preparation conditions, electrical resistivity is about 3.0×10－4cm, and the average visible transmittance is better than 80%. By an atomic force microscope, the surface of the film had been examined.%论述了ITO膜的导电及生长机理，讨论了离子辅助(IAD)电子枪蒸镀ITO膜的方法中，膜的组分、氧分压、衬底温度和蒸发速率等几个参数对ITO膜光电性能的影响，在选择合适的工艺条件下制备ITO膜，电阻率约3×10-4Ω*cm，可见光平均透过率高于80％。并用原子力显微镜（AFM）对溅射及蒸发膜进行了表面面型测试。
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