Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope

YoshitakaSHITANI; NoboruMIYATA; MihiroYANAGIHARA; MakotoWATANABE

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Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope

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Thermal diffusion of Si atoms at the interface in Mo/Si multilayers was observed with an imaging type soft X ray emission microscope developed by us. It was possible to observe the diffusion with 0.2nm depth resolution in the direction normal to the interface by comparing the emission intensity for exactly the same position. The diffusion coefficient of Si atoms in Mo at 600℃ was roughly estimated to be 6.0×10 17 cm 2/s.

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《光学精密工程》 |2001年第5期|446-450|共5页
作者
YoshitakaSHITANI; NoboruMIYATA; MihiroYANAGIHARA; MakotoWATANABE;
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作者单位

InstituteofMultidisciplinaryResearchforAdvancedMaterials;

TokokuUniversity2-1-1Katahira;

Aoba-ku;

Sendai980-8577;

Japan;

AisinAWCo.;

10Takane;

Fujii-cho;

Anjo;

Aichi444-l192;

Japan;

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原文格式 PDF
正文语种 chi
中图分类薄膜的性质;
关键词
multilayer; films; thermal; diffusion; soft; X-ray; emission; microscope;

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专利

1. Thermal Diffusion of Si Atoms at the Interface of Mo/Si BilayersrnStudied with a Soft X-ray Emission Microscope [J] . . 光学精密工程 . 2001,第005期
2. Interface morphologicS in strained Si1-xGex／Si multi1ayers on vicinal Si（111） substrates probed by grazing-angle x-ray scattering [C] . . 第七届全国X射线衍射学术会议 . 1998
3. Ti--W--M(M=B，Si，Zr，Mo，Nb)和Cu--Nb--X(X=Ni，Si)体系相图热力学的研究 [A] . 周佳强 . 2020

Thermal Diffusion of Si Atoms at the Interface of Mo/Si Bilayers Studied with a Soft X-ray Emission Microscope

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