Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser

徐鸣; 施卫; 姜增公; 王少强; 符张龙

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Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser

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Semi-insulating gallium arsenide(GaAs) photoconductive semiconductor switches (PCSS) have great potential for high voltage switching application,however,the utility is restricted by surface flashover which would result in breakdown.In this paper,a model of photo-activated charge wave was proposed based on the theory of photo-activated charge domain(PACD) in GaAs PCSS,and moderate suppression of PACD formation by loading the semiconductor surface with dielectric material was investigated theoretically and experimentally.Current as high as 3.7 kA was obtained at 28 kV,implying that this method can effectively inhibit the surface flashover and improve the service life of DC charged GaAs PCSS.

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《等离子体科学和技术：英文版》 |2011年第6期|672-675|共4页
作者
徐鸣; 施卫; 姜增公; 王少强; 符张龙;
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作者单位

Applied Physics Department;

Xi'an University of Technology;

APPlied Physics Department;

Xi'an University of Technology;

State Key Laboratory of Electrical Insulation and Power Equipment;

Xi'an Jiaotong University;

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原文格式 PDF
正文语种 chi
中图分类各种开关;
关键词
半绝缘砷化镓; 光电开关; 表面闪络; 激光触发; 实验; 高功率; 半导体表面; 光导开关;

机译：半绝缘砷化镓;光电开关;表面闪络;激光触发;实验;高功率;半导体表面;光导开关;

Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser

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