首页>
中文期刊>
《等离子体科学和技术：英文版》
>Monte Carlo Simulation of Electron Velocity Distribution and Gas Phase Process in Electron-Assisted Chemical Vapor Deposition
Monte Carlo Simulation of Electron Velocity Distribution and Gas Phase Process in Electron-Assisted Chemical Vapor Deposition
The gas phase process of diamond film deposition from CH4/H2 gas mixture byelectron-assisted chemical vapor deposition is simulated by the Monte-Carlo method. The elec-tron velocity distribution under different E/P (the ratio of the electric field to gas pressure) isobtained, and the velocity profile is asymmetric. The variation of the number density of CH3and H with different CH4 concentrations and gas pressure is investigated, and the optimal exper-imental parameters are obtained: the gas pressure is in the range of 2.5 kPa ～ 15 kPa and theCH4 concentration is in the range of 0.5% ～ 1%. The energy carried by the fragment CH3 asthe function of the experiment parameters is investigated to explain the diamond growth at lowtemperature. These results will be helpful to the selection of optimum experimental conditionsfor high quality diamond films deposition in EACVD and the modeling of plasma chemical vapordeposition.
展开▼
