Three-phase bridge voltage source pulse width modulation (PWM) rectifier,due many advantages such as high power factor and low harmonics content,is widely used in industry and aeronautics applications.Silicon carbide(SiC) metal-oxide-semiconductor field effect transistor(MOSFET) which emerged in recent years highlights with low forward voltage,high blocking voltage,low switching loss and high operational case temperature,are of vital importance to increase power density and effficiency.On this basis,SiC MOSFET are applied in three-phase PWM rectifier,and its digital controlling system is designed.To increase switching frequency,the mathematical models are established under high and low frequency condition,and space vector PWM(SVPWM) is simplified.Finally,a 5 kW three-phase PWM rectifier prototype is designed.The simulation and experiment results verify the theoretical analysis.%三相电压源型桥式脉宽调制(PWM)整流器由于其交流侧功率因数高、谐波含量少等优点,广泛应用于各种工业、航空航天等场合.近年来出现的碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)功率器件具有阻断电压高、导通电压低、开关损耗低、耐高温工作等特点,对整流器效率的提升及实现高功率密度均有重要意义.将SiC MOSFET应用于三相桥式PWM整流器,研究了整流器高频和低频数学模型,并针对高频下数字控制处理时间长的影响,对程序中的空间矢量脉宽调制(SVPWM)算法进行分析简化.最后设计了5kW三相桥式PWM整流器原理样机,通过仿真与实验验证了控制算法的合理性.
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