设计了一种应用于微波光子学的硅基锗硅电吸收调制器。调制器基于Franz⁃Keldysh电吸收调制效应，通过硅基锗硅的选择外延形貌控制实现了调制器有源区单模传输和较大的限制因子。形貌控制同时可形成三维渐变耦合结构，减小了硅脊形波导与GeSi有源区波导的输入输出损耗。为了优化电学结构，调制器采用了硅和锗硅并联。设计表明，对于70μm长有源区，调制器消光比为8．4 dB，3 dB带宽50 GHz，同时具有较低的插损3．6 dB。%An electro⁃absorption modulator applied to microwave photonics is designed. The modulator is based on Fran⁃Keldysh effect.The topography control of selective epitaxy of GeSi on Si substrate is used for single mode and large confinement factor.3D taper, formed by topography⁃controlling method,situating at the input and output waveguide is used to decrease the coupling loss.To improve the electrical structure,Si and Ge parallel structure is adopted. For the modulator with length and width of 70 μm and 0. 7 μm, the extinction ratio and 3 dB bandwidth is 8.4 dB and larger than 50 GHz,and simultaneously the insertion loss is only 3.6 dB.
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