Physical and electronic asymmetry plays a crucial role in rectifiers and other devices with a directionally variant current-voltage (Ⅰ-V)ratio.Several strategies for practically creating asymmetry in nanoscale components have been demonstrated,but complex fabrication procedures,high cost,and incomplete mechanistic understanding have significantly limited large-scale applications of these components.In this work,we present density functional theory calculations which demonstrate asymmetric electronic properties in a metal-semiconductor-metal (MSM) interface composed of stacked van der Waals (vdW) heterostructures.Janus MoSSe has an intrinsic dipole due to its asymmetric structure and,consequently,can act as either an n-type or p-type diode depending on the face at the interior of the stacked structure (SeMoS-SMoS vs.SMoSe-SMoS).In each configuration,vdW forces dominate the interfacial interactions,and thus,Fermi level pinning is largely suppressed.Our transport calculations show that not only does the intrinsic dipole cause asymmetric Ⅰ-Ⅴ characteristics in the MSM structure but also that different transmission mechanisms are involved across the S-S (direct tunneling) and S-Se interface (thermionic excitation).This work illustrates a simple and practical method to introduce asymmetric Schottky barriers into an MSM structure and provides a conceptual framework which can be extended to other 2D Janus semiconductors.
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