This paper surveys domain-specific architectures（DSAs） built from two emerging memory technologies. Hybrid memory cube（HMC） and high bandwidth memory（HBM） can reduce data movement between memory and computation by placing computing logic inside memory dies. On the other hand, the emerging non-volatile memory, metal-oxide resistive random access memory（ReRAM） has been considered as a promising candidate for future memory architecture due to its high density, fast read access and low leakage power. The key feature is ReRAM’s capability to perform the inherently parallel in-situ matrixvector multiplication in the analog domain. We focus on the DSAs for two important applications—graph processing and machine learning acceleration. Based on the understanding of the recent architectures and our research experience, we also discuss several potential research directions.
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