介绍了石墨相氮化碳(g-C3N4)的电子性质、能带结构以及光学性质,讨论了各种提高g-C3N4活性的重要方法、机理及其优缺点,主要有掺杂改性、表面形貌改性、半导体复合改性等手段,简述了目前g-C3N4存在比表面积小、载流体复合率高、电子传递速度低等问题,并对g-C3N4的未来发展趋势进行了展望.%The electronic properties,band structure and optical properties of graphite phase carbon nitride (g-C3N4) were introduced.The important methods,mechanism,advantages and disadvantages of various activities to improve g-C3N4 activity were discussed,such as doping modification,surface modification,and semiconductor compound modification.The existing problems of low specific surface area,high carrier recombination rate and low electron transport rate of g-C3N4 were briefly described.The future development trend of g-C3N4 was also prospected.
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