To prepare high stoichiometric-ratio SnS thin films,a serials SnS thin films were prepared at 280℃, 320 ℃ and 360 ℃ on slide glass and FTO substrates in air by a facial spin coating-pyrolysis method. Energy spec-trum analysis(EDS),X-ray diffraction(XRD),Raman scattering analysis,scanning electron microscopy(SEM) and ultraviolet-visible-near infrared spectrophotometer(UV-VIS-NIR) were used to investigate the elementary com-positions,crystalline phases,morphologies and optical absorption. The SnS thin film with the high Sn/S stoichio-metric-ratio of 1/0.99 and a direct corresponding ban gap of 1.46 eV was prepared at 320 ℃ for 10 min, which was very close to the optimal band gap required by the absorption layer in semiconductor solar cell (1.5 eV) and with important potential application value in this field.%为制备高化学计量比的SnS薄膜,使用一种简单的旋涂热解法,在空气中以载玻片和FTO为衬底,在热解温度分别为280 ℃、320 ℃和360 ℃条件下制备了系列SnS薄膜,并采用EDS、XRD、Raman、SEM、UV-Vis-NIR等手段研究了热解温度对SnS薄膜元素组成、晶相、形貌、光学吸收等的影响.结果表明,在热解温度为320 ℃热解10 min时,获得的SnS薄膜Sn/S的原子比为1/0.99,直接禁带宽度为1.46 eV,十分接近太阳能电池吸收层的最佳禁带宽度1.50 eV,在太阳能电池吸收层材料领域具有重要潜在应用价值.
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