Vanadium thin films with different thickness were deposited on silica glass by DC magnetron sputtering, and the optimum oxide temperature in the air and the film thickness to fabricate vanadium dioxide thin films with good property were found. X-ray Diffraction(XRD), Fourier transform-infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to analyze the crystallinity, infrared light transmission property and surface composition of the films. The results show that VO2 thin film can be obtained by oxidation process (370 ℃, 60 min in the air) from vanadium film (100 ran) with phase transition temperature 45 ℃ , thermal lag about 10 ℃ and light transmittance changes 41% from low temperature to high temperature.%采用直流溅射法在石英衬底上沉积不同厚度的金属钒(V)膜,在空气氛围中进行不同温度热氧化处理获得性能最佳的退火温度和薄膜厚度.用x射线衍射仪(XRD),傅里叶变换红外光谱仪(FT-IR)和X射线光电子能谱仪分别研究了薄膜的晶体结构,红外透射性和表面组分.结果表明:厚度约为100nm的金属钒膜在空气中370.C下氧化60 min制得VO2含量较高,相变温度45℃,热滞宽度约10℃,高低温光透过率变化41％的氧化钒薄膜.
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