半导体桥( SCB,Semiconductor Bridge)易受到外界复杂环境的干扰导致误爆,所以防护电路的设计对其应用显得尤为重要.传统的防护电路由于吸收能量小、工艺复杂等原因难与SCB集成制造.提出了一种基于CMOS工艺的保护技术,利用电容和肖特基管来完成对SCB的静电放电(ESD)防护和电磁干扰(EMI)防护,易与SCB进行集成化制造,提高SCB器件的稳定性和安全性,在Simplorer仿真中验证了所设计防护电路的性能满足要求.%The protect circuit of the semiconductor bridge is becoming more and more vital due to the serve environment which may lead to the sporadic explosion. Several weaknesses such as the small absorption of energy, complex process contributes to the difficulty of SCB integrated manufacturing. A technology based on CMOS is introduced , which contains the capacitor and Schottky diode to avoid the affects of electrostatic discharge ( ESD) and electromagnetic interference ( EMI) , respectively. At last , the simulation results from Simplorer demonstrate the protect circuit meet the requirements.
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