High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy

舒永春; 皮彪; 林耀望; 邢小东; 姚江宏; 王占国; 许京军

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High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy

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摘要

Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77 K) of more than 1.50×10~5 cm^2/(V·s) can still be obtained. The structures and growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron mobility as high as 1.78×10~6 cm^2/(V·s) is achieved, and the quantum Hall oscillation phenomena can be observed.

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《中国有色金属学报：英文版》 |2005年第2期|332-335|共4页
作者
舒永春; 皮彪; 林耀望; 邢小东; 姚江宏; 王占国; 许京军;
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作者单位

Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials;

Ministry of Education;

Nankai University;

Tianjin 300457;

China;

Key Laboratory for Semiconductor Materials Science;

Chinese Academy of Sciences;

Beijing 100083;

China;

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原文格式 PDF
正文语种 chi
中图分类晶体生长工艺;半导体物理学;
关键词
电子迁移率; 砷化镓; 磷化铟掺杂; 晶体生长; 固态源分子束;

机译：调制掺杂砷化镓;高电子迁移率;量子霍尔振荡;

High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy

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