Modeling of gas phase diffusion transport during chemical vapor infiltration process

肖鹏; 李娣; 徐永东; 黄伯云

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Modeling of gas phase diffusion transport during chemical vapor infiltration process

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In order to improve the uniformity of both the concentration of gaseous reagent and the deposition of matrix within micro pores during the chemical vapor infiltration (CVI) process, a calculation modeling of gas phase diffusion transport within micro pores was established. Taken CH 3SiCl 3 as precursor for depositing SiC as example, the diffusion coefficient, decomposing reaction rate, concentration within the reactor, and concentration distributing profiling of MTS within micro pore were accounted, respectively. The results indicate that, increasing the ratio of diffusion coefficient to decomposition rate constant of precursor MTS is propitious to decrease the densification gradient of parts, and decreasing the aspect ratio (L/D) of micro pore is favorable to make the concentration uniform within pores.

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《中国有色金属学报：英文版》 |2002年第3期|429-432|共4页
作者
肖鹏; 李娣; 徐永东; 黄伯云;
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作者单位

State Key Laboratory for Powder Metallurgy;

Central South University;

Changsha 410083;

China;

Loudi Agriculture and Agro-machine School;

Loudi 417000;

China;

State Key Laboratory of Solidification Processing;

Northwestern Polytechnical University;

Xi′an 710072;

China;

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原文格式 PDF
正文语种 chi
中图分类真空镀与气相镀法;
关键词
CVI; 建模; 扩散; 复合材料; 气相镀;

机译：化学气相渗透;模型;扩散传输;复合材料;

Modeling of gas phase diffusion transport during chemical vapor infiltration process

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