Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon

陈贵锋; 李养贤; 李兴华; 蔡莉莉; 马巧云; 牛萍娟; 牛胜利; 陈东风

首页> 中文期刊> 《中国有色金属学报：英文版》 >Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon

Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon

开具论文收录证明 >>

期刊封面封底目录下载 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

A rapid thermal process (RTP) was first introduced into the intrinsic gettering (IG) processes of fast neutron irradiated Czochralski (CZ) silicon. The effect of RTP conditions on bulk microdefects (BMDs) and denuded zone (DZ) was investigated. Fourier transform infrared absorption spectrometer (FTIR) was used to measure the concentration of interstitial oxygen ([Oi]). Bulk microdefects were observed by optical microscope. The results show that, according to the variation of [Oi], it is found that RTP doesn’t change the processes of oxygen precipitation in fast neutron irradiated Czochralski silicon. Perfect denuded zone, dense oxygen precipitates and defects form in the bulk of irradiated samples. With increasing temperature of RTP, the width of denuded zone decreases. Increasing RTP cooling rate, the density of Bulk microdefects increases. DZ forms in the sample that annealed in nitrogen atmosphere.

著录项

来源
《中国有色金属学报：英文版》 |2006年第b01期|109-112|共4页
作者
陈贵锋; 李养贤; 李兴华; 蔡莉莉; 马巧云; 牛萍娟; 牛胜利; 陈东风;
展开▼
作者单位

School of Materials Science and Engineering;

Hebei University of Technology;

Tianjin 300130;

China;

School of Science;

Tianjin University of Commerce;

Tianjin 300134;

China;

School of Information and Communication;

Tianjin Polytechnic University;

Tianjin 300160;

China;

China Institute of Atomic Energy;

Beijing 102413;

China;

展开▼
原文格式 PDF
正文语种 chi
中图分类表面处理;
关键词
快速热合成法; 快中子辐照直拉硅; FTIR; 内部去疵法; 硅单晶;

机译：快速热合成法;快中子辐照直拉硅;FTIR;内部去疵法;硅单晶;

Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon

摘要

著录项

相关主题

期刊订阅