Graphene with high transmittance and good electrical conductivity is considered to be an ideal transparent conductive material. However, due to the polycrystalline property and low intrinsic carrier concentration of graphene, the sheet resistance of graphene transparent conductive film ( G-TCO) is on the high side, which can’t meet the requirements of practical application. Therefore, it is very important for the application of G-TCO to improve the conductivity of graphene. Improving carrier concentration of graphene by doping is one of the important ways to improve the electrical conductivity of G-TCO. G-TCO on Cu foils by chemical vapor deposition ( CVD) is prepared, treated by nitric acid. The effect of doping on the carrier concentration and conductivity of G-TCO is studied. Experimental results confirmed that P-type doping was intro-duced in G-TCO after nitric acid treatment, which made the carrier concentration increase 2. 5 times and sheet resistance drop from 530Ωto 205Ωand significantly improved the electrical conductivity of G-TCO. The high transmittance property of G-TCO was slightly reduced after nitric acid treatment.%石墨烯同时具备高透过率和良好的导电性可作为透明导电材料，然而由于CVD法制备的石墨烯的多畴特性，以及石墨烯本征载流子浓度较低，目前石墨烯透明导电膜方阻偏高，还无法满足实际应用需要，因此探索提高石墨烯的导电性对推进石墨烯透明导电膜应用发展是非常重要的。通过掺杂提高石墨烯的载流子浓度从而提高石墨烯的导电性是其中一条重要途径。采用CVD法在铜箔上制备了石墨烯透明导电膜，并用硝酸处理石墨烯，研究了掺杂作用对石墨烯载流子浓度以及电导率的影响。实验结果证实硝酸处理会在石墨烯中引入P型掺杂，掺杂使得载流子的浓度增加了约2.5倍，方阻从530~205Ω/□，显著改善了石墨烯的导电性能，而石墨烯高透过率特性并未因掺杂而降低。
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