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Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health

机译:溅射AlN:Er薄膜的基底温度相关特性用于Al / AlN多层涂层健康的原位发光传感

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摘要

The integrity and reliability of surface protective coatings deposited on metal surface could be in-situ monitored via the attractive luminescence sensing technique. In this paper, we report the influence of substrate temperature on the properties of erbium (Er) doped aluminum nitride (AlN) film, which could be applied as a luminescent layer for monitoring the health of multilayered Al/AlN coating. The AlN:Er films were deposited via reactive radio-frequency magnetron sputtering, and the silicon substrate temperature was varied from non-intentional heating up to 400 °C. The composition, morphology, crystalline structure, and dielectric function of the AlN:Er films deposited under these different substrate temperature conditions were studied. These properties of the AlN:Er films show strong correlation with the substrate temperature maintained during film fabrication. The obtained AlN:Er films, without further annealing, exhibited photoluminescence peaks of the Er3+ ions in the visible wavelength range and the strongest photoluminescence intensity was observed for the AlN:Er film deposited with the temperature of substrate kept at 300 °C. The results demonstrated in this work offer guidance to optimize the substrate temperature for the deposition of AlN:Er film for future application of this sensing technique to thin metal components.
机译:可以通过有吸引力的发光传感技术原位监测沉积在金属表面的表面保护涂层的完整性和可靠性。在本文中,我们报告了基板温度对掺((Er)的氮化铝(AlN)膜性能的影响,该膜可用作发光层以监测多层Al / AlN涂层的健康状况。通过反应性射频磁控溅射沉积AlN:Er膜,硅衬底的温度从无意加热到最高400°C不等。研究了在这些不同衬底温度条件下沉积的AlN:Er膜的组成,形态,晶体结构和介电功能。 AlN:Er膜的这些特性显示出与膜制造过程中保持的基板温度的强相关性。获得的AlN:Er膜未经进一步退火,在可见波长范围内表现出Er 3 + 离子的光致发光峰,并且观察到在温度为200℃的条件下沉积的AlN:Er膜的光致发光强度最强。基材保持在300°C。这项工作中展示的结果为优化AlN:Er膜沉积的衬底温度提供了指导,以便将该传感技术进一步应用于薄金属部件。

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