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首页> 美国卫生研究院文献>Materials >Ferromagnetic Properties of N-Doped and Undoped TiO2 Rutile Single-Crystal Wafers with Addition of Tungsten Trioxide
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Ferromagnetic Properties of N-Doped and Undoped TiO2 Rutile Single-Crystal Wafers with Addition of Tungsten Trioxide

机译：掺三氧化钨的N掺杂和未掺杂TiO2金红石型单晶晶片的铁磁性能

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In this work, undoped, N-doped, WO3-loaded undoped, and WO3-loaded with N-doped TiO2 rutile single-crystal wafers were fabricated by direct current (DC) magnetron sputtering. N-doping into TiO2 and WO3 loading onto TiO2 surface were used to increase and decrease oxygen vacancies. Various measurements were conducted to analyze the structural and magnetic properties of the samples. X-ray diffraction results showed that the N-doping and WO3 loading did not change the phase of all samples. X-ray photoelectron spectroscopy results revealed that W element loaded onto rutile single-crystal wafers existed in the form of WO3. UV-Vis spectrometer results showed that the absorption edge of WO3-loaded undoped and WO3-loaded with N-doped TiO2 rutile single-crystal wafers had red shift, resulting in a slight decrease in the corresponding band gap. Photoluminescence spectra indicated that oxygen vacancies existed in all samples due to the postannealing atmosphere, and oxygen vacancies density increased with N-doping, while decreasing with WO3 loading onto TiO2 surface. The magnetic properties of the samples were investigated, and the saturation magnetization values were in the order N-doped > WO3-loaded with N-doped > undoped > WO3-loaded undoped rutile single-crystal wafers, which was the same order as the oxygen vacancy densities of these samples. N-doping improved the saturation magnetization values, while WO3-loaded decreased the saturation magnetization values. This paper reveals that the magnetic properties of WO3-loaded with N-doped rutile single-crystal wafers originate from oxygen vacancies.
机译：在这项工作中，通过直流（DC）磁控管溅射制备了未掺杂，N掺杂，WO3负载的未掺杂和WO3以及N掺杂的TiO2金红石型单晶晶片。 N掺杂到TiO2中和WO3负载在TiO2表面上可以增加和减少氧空位。进行了各种测量以分析样品的结构和磁性。 X射线衍射结果表明，N掺杂和WO3负载并未改变所有样品的相。 X射线光电子能谱结果表明，负载在金红石单晶晶片上的W元素以WO3的形式存在。 UV-Vis光谱仪结果表明，未掺杂WO3和未掺杂N3掺杂的TiO2金红石型单晶晶片的WO3的吸收边缘发生红移，相应带隙略有减小。光致发光光谱表明，由于后退火气氛，所有样品中都存在氧空位，并且氧空位密度随N掺杂而增加，而随WO 3负载到TiO 2表面上而降低。研究了样品的磁性能，饱和磁化强度的顺序为：N掺杂> WO3负载N掺杂>未掺杂> WO3负载未掺杂金红石单晶晶片，其顺序与氧相同这些样品的空位密度。 N掺杂改善了饱和磁化强度，而WO3负载降低了饱和磁化强度。揭示了掺有N掺杂金红石型单晶硅片的WO 3 的磁性是由氧空位引起的。

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