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首页> 美国卫生研究院文献>Materials >The Effect of SiC Content on Microstructure and Microwave Heating Rate of h-BN/SiC Ceramics Fabricated by Spark Plasma Sintering
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The Effect of SiC Content on Microstructure and Microwave Heating Rate of h-BN/SiC Ceramics Fabricated by Spark Plasma Sintering

机译：SiC含量对火花等离子体烧结制备h-BN / SiC陶瓷的组织和微波加热速率的影响

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摘要

Hexagonal boron nitride/silicon carbide (h-BN/SiC) ceramics were fabricated by a spark plasma sintering (SPS) method. Phase and microstructure of ceramics were characterized and observed, respectively, using the X-ray diffraction, scanning electron microscope and electron probe microanalysis. The effect of molar ratios of SiC to h-BN on the microstructure, relative density, hardness, thermal conductivity, and the heating rate by microwaves on the ceramics were investigated. The results showed that the orientation of flake-like h-BN was significantly influenced by SiC content in h-BN/SiC ceramics. With the increasing of SiC content, the h-BN flakes gradually became an isotropic distribution from the preferred orientation aligning in a SPS pressure direction. The relative density of h-BN/SiC ceramics was 97.6 ± 0.9% at a molar ratio of SiC to h-BN of 40/60 mol%. The preferential orientation of h-BN flakes contributed to a relatively high thermal conductivity along the SPS pressure direction, which was beneficial to increasing the heating rate of h-BN/SiC ceramics in microwave fields.
机译：六边形氮化硼/碳化硅（h-BN / SiC）陶瓷是通过火花等离子体烧结（SPS）方法制造的。使用X射线衍射，扫描电子显微镜和电子探针显微分析分别表征和观察了陶瓷的相和微观结构。研究了SiC与h-BN的摩尔比对陶瓷的微观结构，相对密度，硬度，导热系数以及微波加热速率的影响。结果表明，片状h-BN的取向受到h-BN / SiC陶瓷中SiC含量的显着影响。随着SiC含量的增加，h-BN薄片从沿SPS压力方向取向的优选取向逐渐变为各向同性分布。在SiC与h-BN的摩尔比为40/60 mol％的情况下，h-BN / SiC陶瓷的相对密度为97.6±0.9％。 h-BN薄片的优先取向导致沿SPS压力方向的导热性相对较高，这有利于提高h-BN / SiC陶瓷在微波领域的加热速率。

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