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首页> 美国卫生研究院文献>Nanomaterials >Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes
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Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes

机译：硬X射线同步加速器纳米探针对GaN / InGaN核壳单纳米线的元素分布和结构表征

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摘要

Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity without destroying the material. Three complementary hard X-ray synchrotron techniques at the nanoscale have been applied to the study of individual nanowires (NWs) containing non-polar GaN/InGaN multi-quantum-wells. The trace elemental sensitivity of X-ray fluorescence allows one to determine the In concentration of the quantum wells and their inhomogeneities along the NW. It is also possible to rule out any contamination from the gold nanoparticle catalyst employed during the NW growth. X-ray diffraction and X-ray absorption near edge-structure probe long- and short-range order, respectively, and lead us to the conclusion that while the GaN core and barriers are fully relaxed, there is an induced strain in InGaN layers corresponding to a perfect lattice matching with the GaN core. The photoluminescence spectrum of non-polar InGaN quntum wells is affected by strain and the inhomogeneous alloy distribution but still exhibits a reasonable 20% relative internal quantum efficiency.
机译：基于同步加速器的X射线探针的空间分辨率的提高已达到纳米级，如今，它们构成了研究半导体纳米结构和纳米器件的强大平台，可提供高灵敏度而又不破坏材料。纳米级的三种互补硬X射线同步加速器技术已用于研究包含非极性GaN / InGaN多量子阱的单个纳米线（NW）。 X射线荧光的痕量元素敏感性使人们能够确定量子阱的In浓度及其沿NW的不均匀性。还可以排除在NW生长期间所使用的金纳米颗粒催化剂造成的任何污染。边缘结构附近的X射线衍射和X射线吸收分别探测长程和短程有序，并得出以下结论：尽管GaN核和势垒被完全松弛，但相应的InGaN层中存在感应应变与GaN核完美匹配。非极性InGaN昆腾阱的光致发光光谱受应变和合金不均匀分布的影响，但仍表现出合理的20％相对内部量子效率。

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