首页> 美国卫生研究院文献>Proceedings of the National Academy of Sciences of the United States of America >Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells
【2h】

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

机译:非晶氧化物合金作为界面层可广泛用于有机光伏电池的电子结构

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.
机译:在各种类型的有机光电器件中,控制有机半导体-无机电极界面之间的电荷注入,提取和阻断对于提高量子效率和输出电压至关重要。为此,在电触点和有机半导体之间插入工程界面层(IFL)的策略显着提高了有机发光二极管和有机薄膜晶体管的性能。对于有机光伏(OPV)器件,一种电子灵活的IFL设计策略可以在不改变表面化学性质的情况下逐步调整无机电极系统和有机光敏部件之间的能级匹配,这将使OPV电池适应不断变化的光敏材料世代。在这里,我们报告了化学/环境稳健,低温固溶处理的非晶态透明半导体氧化物合金In-Ga-O和Ga-Zn-Sn-O的实现,作为倒置OPV的IFL。 IFL成分的连续变化可在很宽的范围内调节导带的最小值,从而为多种有机活性层材料提供优化的OPV功率转换效率,并在IFL /光敏层能量与器件性能之间建立清晰的关联。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号