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Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

机译：基于CFD模拟和相应表面模型的行星GaN-MOCVD薄膜沉积速率优化研究

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摘要

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.
机译：金属有机化学气相沉积（MOCVD）是制造用于发光二极管和半导体激光二极管的GaN薄膜结构的关键技术。薄膜均匀性是衡量设备性能和芯片工艺的重要指标。本文介绍了一种通过优化模型的不同衬底的转速来提高薄膜质量的方法，该模型由一个行星齿轮和七个用于GaN-MOCVD的6英寸晶圆组成。使用计算流体动力学获得了低压瞬态的数值解。为了评估不同区域速度对生长均匀性的作用，引入了单因素分析。结果表明，生长速度和均匀度与转速密切相关。接下来，通过使用变量和相应的仿真结果来构建响应表面模型。通过响应面模型和遗传算法在生长速度和生长均匀性之间取得平衡，获得了不同速度匹配的优化组合，为工业应用提供了有用的参考。这种方法可以节省时间，并且优化可以获得最均匀和最高的薄膜质量。

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