首页> 美国卫生研究院文献>Science Advances >Passive radiofrequency x-ray dosimeter tag based on flexible radiation-sensitive oxide field-effect transistor

【2h】

Passive radiofrequency x-ray dosimeter tag based on flexible radiation-sensitive oxide field-effect transistor

机译：基于柔性辐射敏感氧化物场效应晶体管的无源射频X射线剂量计标签

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

摘要
著录项
相似文献
相关主题

摘要

Distributed x-ray radiation dosimetry is crucial in diverse security areas with significant environmental and human impacts such as nuclear waste management, radiotherapy, or radioprotection devices. We present a fast, real-time dosimetry detection system based on flexible oxide thin-film transistors that show a quantitative shift in threshold voltage of up to 3.4 V/gray upon exposure to ionizing radiation. The transistors use indium-gallium-zinc-oxide as a semiconductor and a multilayer dielectric based on silicon oxide and tantalum oxide. Our measurements demonstrate that the threshold voltage shift is caused by the accumulation of positive ionization charge in the dielectric layer due to high-energy photon absorption in the high-Z dielectric. The high mobility combined with a steep subthreshold slope of the transistor allows for fast, reliable, and ultralow-power readout of the deposited radiation dose. The order-of-magnitude variation in transistor channel impedance upon exposure to radiation makes it possible to use a low-cost, passive radiofrequency identification sensor tag for its readout. In this way, we demonstrate a passive, programmable, wireless sensor that reports in real time the excess of critical radiation doses.

机译：分布式X射线辐射剂量测定法在具有重大环境和人类影响的各种安全领域（如核废料管理，放射疗法或放射防护设备）至关重要。我们提出了一种基于柔性氧化物薄膜晶体管的快速，实时的剂量学检测系统，该系统在暴露于电离辐射后显示出阈值电压的定量偏移，最高可达3.4 V /灰色。晶体管使用铟镓锌氧化物作为半导体以及基于氧化硅和氧化钽的多层电介质。我们的测量结果表明，阈值电压偏移是由于高Z电介质中的高能光子吸收导致电介质层中正电离电荷的积累引起的。高迁移率与陡峭的亚阈值晶体管相结合，可以快速，可靠和超低功率地读取沉积的辐射剂量。晶体管通道阻抗在暴露于辐射后的数量级变化使得可以使用低成本的无源射频识别传感器标签进行读取。这样，我们演示了一种无源，可编程的无线传感器，该传感器可以实时报告超出临界辐射剂量的情况。

著录项

期刊名称 Science Advances
作者
Tobias Cramer; Ilaria Fratelli; Pedro Barquinha; Ana Santa; Cristina Fernandes; Franck D’Annunzio; Christophe Loussert; Rodrigo Martins; Elvira Fortunato; Beatrice Fraboni;
展开▼
作者单位

展开▼
年(卷),期 2018(4),6
年度 2018
页码 eaat1825
总页数 7
原文格式 PDF
正文语种
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Passive radiofrequency x-ray dosimeter tag based on flexible radiation-sensitive oxide field-effect transistor [J] . Tobias Cramer, Ilaria Fratelli, Pedro Barquinha, Science Advances . 2018,第6期

机译：基于柔性辐射敏感氧化物场效应晶体管的无源射频X射线剂量计标签
2. The empirical dependence of radiation-induced charge neutralization on negative bias in dosimeters based on the metal-oxide-semiconductor field-effect transistor [J] . Chris Benson, Abdulrahman Albadri, Malcolm J. Joyce, Journal of Applied Physics . 2006,第4期

机译：基于金属氧化物半导体场效应晶体管的辐射剂量中和对剂量计负偏压的经验依赖性
3. High-performance GaAs-based metal-oxide-semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al_2O_3 gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition [J] . Takeshi Aoki, Noboru Fukuhara, Takenori Osada, _Applied Physics Express . 2014,第10期

机译：高性能GaAs基金属氧化物半导体异质结构场效应晶体管，原子层沉积Al_2O_3栅氧化物并通过有机金属化学气相沉积原位钝化AlN
4. Ultrathin Self-Assembled Organophosphonic Acid Monolayers/Metal Oxides Hybrid Dielectrics for Low-Voltage Field-Effect Transistors [C] . Hong Ma, Orb Acton, Guy Ting, Annual meeting of the American Chemical Society . 2010

机译：超薄自组装有机膦酸单层/金属氧化物低压场效应晶体管的混合电介质
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Calibration and Error Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor Dosimeters for Computed Tomography Radiation Dosimetry [O] . Sigal Trattner, Peter Prinsen, Jens Wiegert, -1

机译：金属氧化物半导体场效应晶体管剂量计在计算机断层摄影辐射剂量测定中的校准和误差分析
7. The empirical dependence of radiation-induced charge neutralization on negative bias in dosimeters based on the metal oxide-semiconductor field-effect transistor. [O] . Joyce Malcolm J., Albadri Abdulrahman, Benson Chris, 2006

机译：基于金属氧化物半导体场效应晶体管的剂量计中辐射诱导的电荷中和对负偏压的经验依赖性。
8. Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates. [R] . Wang, C., Chien, J., Fang, H., 2012

机译：在刚性和柔性基板上的自对准，极高频III-V金属氧化物半导体场效应晶体管。

Passive radiofrequency x-ray dosimeter tag based on flexible radiation-sensitive oxide field-effect transistor

摘要

著录项

相似文献

相关主题

期刊订阅