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MOS-FET as a Current Sensor in Power Electronics Converters

机译：MOS-FET作为电力电子转换器中的电流传感器

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摘要

This paper presents a current sensing principle appropriate for use in power electronics’ converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on UDS voltage measurement. In practice, shunt resistors and Hall effect sensors are usually used for these purposes, but the presented principle has many advantages. There is no need for additional circuit elements within high current paths, causing parasitic inductances and increased production complexity. The temperature dependence of MOS-FETs conductive resistance RDS−ON is considered in order to achieve the appropriate measurement accuracy. The “MOS-FET sensor” is also accompanied by a signal acquisition electronics circuit with an appropriate frequency bandwidth. The obtained analogue signal is therefore interposed to an A-D converter for further data acquisition. In order to achieve sufficient accuracy, a temperature compensation and appropriate approximation is used (RDS−ON = RDS−ON(ϑj)). The MOS-FET sensor is calibrated according to a reference sensor based on the Hall-effect principle. The program algorithm is executed on 32-bit ARM M4 MCU, STM32F407.
机译：本文提出了适用于电力电子转换器的电流检测原理。此电流测量原理已针对金属氧化物半导体场效应晶体管（MOS-FET）开发，并且基于UDS电压测量。实际上，通常将分流电阻器和霍尔效应传感器用于这些目的，但是所提出的原理具有许多优点。在大电流路径内不需要额外的电路元件，从而不会引起寄生电感并增加生产复杂性。为了获得适当的测量精度，考虑了MOS-FET导电电阻RDS-ON的温度依赖性。 “ MOS-FET传感器”还随附具有适当频率带宽的信号采集电子电路。因此，将获得的模拟信号插入A-D转换器以进行进一步的数据采集。为了获得足够的精度，使用了温度补偿和适当的近似值（RDS-ON = RDS- O N （ ϑ j ））。 MOS-FET传感器根据基于霍尔效应原理的参考传感器进行校准。该程序算法在32位ARM M4 MCU STM32F407上执行。

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