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首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation
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Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

机译：用于高频脉冲回波仪表的高压功率放大器的功率MOSFET线性化器

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摘要

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (−1.8 and −0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (−2.95 and −3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dBm input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dBm at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dBm at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dBm input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (−48.34, −44.21, −48.34, and −46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (−45.61, −41.57, −45.01, and −45.51 dB, respectively). When five-cycle 20 dBm input power was applied, the second, third, fourth, and fifth harmonic distortions of the HVPA with the power MOSFET linearizer (−41.54, −41.80, −48.86, and −46.27 dB, respectively) were also lower than that of the HVPA without the power MOSFET linearizer (−25.85, −43.56, −49.04, and −49.24 dB, respectively). Therefore, we conclude that the power MOSFET linearizer could reduce gain deviation of the HVPA, thus reducing the echo signal harmonic distortions generated by the high-frequency ultrasonic transducers in pulse-echo instrumentation.
机译：提出了一种用于高频脉冲回波仪表的高压功率放大器（HVPA）的功率MOSFET线性化器。功率MOSFET线性化器由直流偏置控制的串联功率MOSFET分流器以及并联的电感器和电容器组成。提出的方案旨在提高HVPA在更高输入功率下的增益偏差特性。通过控制线性化器中的MOSFET偏置电压，可以补偿进入HVPA的增益降低，​​从而减少了超声换能器产生的回波谐波失真分量。为了验证实现功率MOSFET线性化器的HVPA的性能改进，我们进行了测量，发现与HVPA集成的功率MOSFET线性化器在10 V DC偏置电压下的增益偏差减小了（分别为-1.8和-0.96 dB）与分别采用70 MHz和80 MHz，三周期和26 dBm输入脉冲波形的不带功率MOSFET线性化器的HVPA（分别为-2.95和-3.0 dB）相比。与没有功率MOSFET的HVPA相比，带有功率MOSFET线性化器的HVPA在70V和80MHz时的输入1-dB压缩点（线性指数）分别为70.MHz和80MHz时分别为24.17和26.19 dBm。线性化器（分别在70和80 MHz时为22.03 dBm和22.13 dBm）。为了进一步验证由超声换能器产生的回声谐波失真分量的减少，比较了使用带有和不带有功率MOSFET线性化器的HVPA时，脉冲回波仪器中的脉冲回波响应。当施加三周期26 dBm输入功率时，由带有功率MOSFET线性化器（−48.34，−44.21，−48.34和−46.56 dB的HVPA）驱动的HVPA驱动的75 MHz传感器的第二，第三，第四和第五谐波失真分量分别比没有功率MOSFET线性化器的HVPA低（分别为-45.61，-41.57，-45.01和-45.51 dB）。当施加五周期20 dBm输入功率时，使用功率MOSFET线性化器的HVPA的第二，第三，第四和第五谐波失真（分别为-41.54，-41.80，-48.86和-46.27 dB）也更低比没有功率MOSFET线性化器的HVPA分别高（分别为−25.85，−43.56，−49.04和−49.24 dB）。因此，我们得出的结论是，功率MOSFET线性化器可以减小HVPA的增益偏差，从而减少脉冲回波仪器中高频超声换能器产生的回波信号谐波失真。

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