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首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps
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Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

机译：在工作速度超过10 Gbps的导电基板上制造平面型顶部照明的基于InP的雪崩光电探测器并进行表征

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This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.
机译：本文提出了一种使用平面工艺在导电InP晶圆上制造的基于InP的高速顶照雪崩光电探测器（APD）。然后根据直流和动态性能特征评估了所建议的器件。该设计基于单独的吸收，分级，电荷和倍增（SAGCM）外延结构。 SAGCM层的电场分布由外延结构得出。 SAGCM APD的击穿电压控制在16-17 V之内，而击穿电压（VBR）控制在28-29 V之内。我们获得2.99 nA的暗电流，0.226 pF的电容和倍增增益当室温下APD偏置在0.9 VBR时，​​电压为12。通过比较在各种倍增增益和调制入射功率下测得的3dB截止调制频率（f3-dB）和f3-dB值来表征频率响应。通过使用伪随机不归零码在10–12.5 Gbps时长为2 31 -1的伪随机不归零代码，得出0.9 VBR的眼图来评估APD的时间响应。明显没有符号间干扰，并且信号在高达12.5 Gbps的数据速率下仍保持无错误。上升时间与调制带宽之间的相关性证明了所提出的SAGCM-APD芯片适用于数据速率> 10 Gbps的光接收器应用。

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