首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >Gas Sensing Properties of In2O3 Nano-Films Obtained by Low Temperature Pulsed Electron Deposition Technique on Alumina Substrates
【2h】

Gas Sensing Properties of In2O3 Nano-Films Obtained by Low Temperature Pulsed Electron Deposition Technique on Alumina Substrates

机译:氧化铝衬底上低温脉冲电子沉积技术获得的In2O3纳米薄膜的气敏特性

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Nanostructured Indium(III) oxide (In2O3) films deposited by low temperature pulsed electron deposition (LPED) technique on customized alumina printed circuit boards have been manufactured and characterized as gas sensing devices. Their electrical properties have monitored directly during deposition to optimize their sensing performance. Experimental results with oxidizing (NO2) as well as reducing (CO) gases in both air and inert gas carriers are discussed and modeled.
机译:通过低温脉冲电子沉积(LPED)技术在定制的氧化铝印刷电路板上沉积的纳米结构的三氧化二铟(In2O3)膜已被制造出来并表征为气体传感设备。它们的电性能已在沉积过程中直接监控,以优化其感测性能。讨论并模拟了空气和惰性气体载体中的氧化性(NO2)和还原性(CO)气体的实验结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号